复杂势场量子弹球中疤痕态的量子化条件

量子疤痕是波函数在经典不稳定周期轨道周围反常凝聚的一种量子或波动现象.人们对疤痕态的量子化条件进行了大量研究,对深入理解半经典量子化起到了一定的促进作用.之前大部分研究工作主要集中在硬墙量子弹球上,即给定边界形状的无穷深量子势阱系统.本文研究具有光滑复杂势场的二维量子弹球系统,考察疤痕态的量子化条件及其重复出现的规律,得到了与硬墙弹球不一样的结果,对理解这类现象是一个有益的补充.这些结果将有助于理解具有无规长程杂质分布的二维电子系统的态密度谱和输运行为.     

On-chip multiphoton Greenberger–Horne–Zeilinger state based on integrated frequency combs

One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

通过表面机械加工调控Zr52.5Cu17.9Ni14.6Al10Ti5非晶合金的结构和韧性

作为一种新型结构材料, 非晶态合金的韧性需要进一步提高. 提高非晶态合金韧性的方法有引入枝晶相、调整其成分改变其泊松比影响其剪切带衍生、裂纹扩展等.本文通过表面机械加工的方法来调控非晶态合金的微观结构及韧性. 我们采用真空电弧熔炼、亚稳态薄板离心浇铸系统制备了Zr_52.5Cu_17.9Ni_14.6Al₁₀Ti₅ (原子百分比) (Vit105)非晶合金板,并用表面机械研磨处理方法(surface mechanical attrition treatment, SMAT), 在Vit105板上形成纳米尺度局域类晶体序结构. 基于差示扫描量热分析、纳米压痕实验, 我们发现SMAT处理后的Vit105合金板表面附近弛豫焓更低, 微观结构更加均匀、稳定. 通过显微维氏硬度计测试, 发现SMAT处理后样品的表面附近硬度增大,硬度值分布也更均匀. 通过三点弯断裂实验, 可得到SMAT处理后合金板缺口韧度值从70.7 ± 4.7 MPa·m1/2提高到112.8 ± 3.7 MPa·m1/2. SMAT处理后合金板断裂后, 缺口前端剪切带密度比未处理的更大. Vit105合金板韧性的提高源于SMAT处理对剪切带萌生的促进作用. 该研究表明,表面机械加工可以在非晶态合金中形成局域类晶体有序结构, 影响其结构均匀性, 增大其硬度, 促进剪切带萌生, 提高其韧性. 表面机械加工作为一种新型的改变材料性能的手段, 具有广阔的应用前景.      

Lipase‐Supported Metal–Organic Framework Bioreactor Catalyzes Warfarin Synthesis

A green and sustainable strategy synthesizes clinical medicine warfarin anticoagulant by using lipase‐supported metal–organic framework (MOF) bioreactors (see scheme). These findings may be beneficial for future studies in the industrial production of chemical, pharmaceutical, and agrochemical precursors.     

超声筛查早期诊断婴儿发育性髋关节异常的临床管理

目的 了解鄞州区0~6月龄婴儿发育性髋关节异常（developmental dysplasia of hip,DDH）的流行病学特征，探讨DDH 的临床管理模式。方法 由鄞州区妇幼保健机构社区医师和鄞州区第二医院围生医生共同负责完成DDH 的临床初筛工作，可疑或异常者转儿科进一步检查，并予B 超筛查，对不同人群分别进行早期干预、复查、随访及骨盆正位X 线片检查，必要时转小儿骨科治疗。结果 2012 年5 月至2013 年5 月，共6 890 例0~6月龄婴儿进行髋关节B 超筛查，初筛阳性率5.73%（395/6 890），复查阳性率0.59%（34/5729）；月龄越小筛查阳性率越高，差异有统计学意义（P＜0.05）。新生儿及1~3月龄婴儿初筛阳性率高，但复查阳性率明显降低，差异有统计学意义（P＜0.05）；4~6月龄婴儿初筛及复查阳性率差异无统计学意义（P ＞0.05）。结论 鄞州区采取的社区门诊检查- 区医院儿科复查-B 超筛查及转诊治疗的管理模式，可作为基层推进DDH 的早发现和早治疗的有效手段。     

Extraordinary transport behavior of gases in isothermally annealed poly(4‐methyl‐1‐pentene) membranes

Poly(4‐methyl‐1‐pentene) (PMP) membranes were modified through isothermal annealing to investigate the change of their crystalline structure and rigid and mobile amorphous fractions (RAF and MAF), assuming a three‐phase model, affected the gas transport behavior. The crystalline structure was characterized by wide‐angle X‐ray diffraction (WAXD) and small‐angle X‐ray scattering (SAXS) techniques, and the free volume properties were analyzed by positron annihilation lifetime spectroscopy. Compared with the pristine membrane, the annealed membranes show higher crystallinity; the crystals undergo partial structural change from form III to form I. The lamellar crystal thickness, rigid amorphous fraction thickness, and long period in the lamellar stacks increase with crystallinity. The annealed PMP membranes exhibit higher permeability due to the increase in larger size free volumes in MAF and higher selectivity due to the increase in smaller size free volumes in RAF, respectively. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 2368–2376